发明名称 DEVELOPMENT DEVICE, SUBSTRATE TREATER, AND DEVELOPMENT METHOD
摘要 PROBLEM TO BE SOLVED: To raise the equality of treatment, in the case of development treatment to a board, for example, a wafer. SOLUTION: A current plate 6 is arranged above a wafer holder 2 to hold a wafer W, and the roof 62 and the bottom plate 63 of this plate 6 are positioned so that each circulation port 62a and 63a may lie over the other in vertical direction, and a developer D is heaped upon the surface of the wafer. Then, the bottom plate 63 of the plate 6 is slid laterally so that the said circulation ports 62a and 63a may not lie upon the other in vertical direction, prior to development. By doing it this way, at development, the circulation ports 62a and 63a of the plate 6 are blocked in vertical direction, which intercept the air current to the wafer W, so the occurrence of the temperature distribution of the developer D within the surface of the wafer W, which is caused by the flow of the air to the wafer W, is suppressed, and the occurrence of the unevenness in development caused by temperature difference is suppressed, and equal development treatment can be performed.
申请公布号 JP2001118790(A) 申请公布日期 2001.04.27
申请号 JP20000242808 申请日期 2000.08.10
申请人 TOKYO ELECTRON LTD 发明人 MATSUYAMA YUJI;HAMADA MASAHITO
分类号 G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
代理机构 代理人
主权项
地址