| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method by which a photoresist film can be removed from the surface of an organic polysiloxane film without deteriorating the low dielectric constant characteristic of the polysiloxane film. SOLUTION: A wafer W is placed on a lower electrode 106 set up in the treatment chamber 102 of a plasma treatment device 100. On the surface of the wafer W, an organic polysiloxane film made of a low-K material is formed. A partially exposed opening pattern is formed in the polysiloxane film by generating plasma in the treatment chamber 102 and etching the polysiloxane film by using a photoresist film formed on the polysiloxane film. After etching, the wafer W is left as it is in the chamber 102. The pressure in the chamber 102 is set between 30 mTorr (4.00 Pa) and 150 mTorr (20.0 Pa) by introducing a process gas to the chamber 102 and discharging the exhaust gas from the chamber 102. Under the pressure, plasma is generated from the gas in the chamber 102 and the photoresist film is ashed.
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