| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure which is capable of enhancing the electromigration resistance, and its manufacturing method for a semiconductor device. SOLUTION: In the wiring structure for a semiconductor device, a first through-via 5 comprises a multilayer film provided with a bottom layer 1b of high melting-point metal or high melting-point metal nitride and a top layer 1a of copper, copper alloy, aluminum, aluminum alloy, silver, or silver alloy. The first through-via 5 is configured, so that the bottom surface of an opening provided at an insulating film 2a, which covers wiring tightly contacts to the top layer 1a which, is exposed.
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