| 发明名称 |
METHOD OF MAKING A PHOTONIC BAND GAP STRUCTURE |
| 摘要 |
A process by which photonic band gap structures are created by etching trenches in indium gallium arsenide, preferentially in filling the trenches with indium phosphide and forming multiple layers of interleaved regions of indium gallium arsenide and indium phosphide.
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| 申请公布号 |
CA2387980(A1) |
申请公布日期 |
2001.04.26 |
| 申请号 |
CA20002387980 |
申请日期 |
2000.10.03 |
| 申请人 |
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY |
发明人 |
PABLA, ARBINDER SINGH |
| 分类号 |
G02B6/122;(IPC1-7):G02B6/12 |
主分类号 |
G02B6/122 |
| 代理机构 |
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