发明名称 |
SEMICONDUCTOR DEVICE HAVING PRECHARGE CONTROL CIRCUIT AND PRECHARGE METHOD |
摘要 |
PURPOSE: A semiconductor device having a precharge control circuit and a precharge method are provided to reduce a writing time by changing a precharge scheme in a semiconductor device such as MML and a memory device. CONSTITUTION: A pair of bit lines is connected to many memory cells(301). A pair of Input/output(I/O) lines is connected to the pair of bit lines via a column selection gate(305). A precharge circuit precharges/equalizes the pair of I/O lines in response to a precharge signal in case of a writing operation and a reading operation. I/O line driver receives an input data in response to an enable signal during the writing operation, and drives the pair of I/O lines. A precharge control circuit(311) generates the precharge signal in response to a precharge control signal informing the precharge operation starting and the enable signal so as to make the precharge/equalizing time in case of the writing operation be shorter than the precharge/equalizing time in case of the reading operation. The enable signal is enabled prior to a predetermined time at which a column selection line for controlling the column selection gate is enabled. The precharge signal is disabled by enabling the enable signal.
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申请公布号 |
KR100295041(B1) |
申请公布日期 |
2001.04.24 |
申请号 |
KR19980006611 |
申请日期 |
1998.02.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, GYU HONG |
分类号 |
G11C11/409;G11C7/10;G11C11/34;G11C11/407;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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