发明名称 SEMICONDUCTOR DEVICE HAVING PRECHARGE CONTROL CIRCUIT AND PRECHARGE METHOD
摘要 PURPOSE: A semiconductor device having a precharge control circuit and a precharge method are provided to reduce a writing time by changing a precharge scheme in a semiconductor device such as MML and a memory device. CONSTITUTION: A pair of bit lines is connected to many memory cells(301). A pair of Input/output(I/O) lines is connected to the pair of bit lines via a column selection gate(305). A precharge circuit precharges/equalizes the pair of I/O lines in response to a precharge signal in case of a writing operation and a reading operation. I/O line driver receives an input data in response to an enable signal during the writing operation, and drives the pair of I/O lines. A precharge control circuit(311) generates the precharge signal in response to a precharge control signal informing the precharge operation starting and the enable signal so as to make the precharge/equalizing time in case of the writing operation be shorter than the precharge/equalizing time in case of the reading operation. The enable signal is enabled prior to a predetermined time at which a column selection line for controlling the column selection gate is enabled. The precharge signal is disabled by enabling the enable signal.
申请公布号 KR100295041(B1) 申请公布日期 2001.04.24
申请号 KR19980006611 申请日期 1998.02.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, GYU HONG
分类号 G11C11/409;G11C7/10;G11C11/34;G11C11/407;(IPC1-7):G11C11/34 主分类号 G11C11/409
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