| 摘要 |
PROBLEM TO BE SOLVED: To obtain a composition for film forming excellent in dielectric constant properties, mechanical properties and an adhesion to a substrate as an interlayer insulating film in a semiconductor element, etc., and capable of forming a silica-based film. SOLUTION: The characteristic of this composition for film forming is to comprise (A) a hydrolytic condensate obtained by hydrolyzing and carrying out condensation at least one kind of a silane compound selected from the group of a compound represented by general formula (1): RaSi(OR1)4-a a [R denotes H, F or a monovalent organic group; R1 denotes a monovalent organic group; and (a) denotes an integer of 1-2], a compound represented by general formula (2): Si(OR2)4 (R2 denotes a monovalent organic group) and a compound represented by general formula (3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [R3 to R6 are same or different and denote each a monovalent organic group; b and c are same or different and denote each an integer of 0-2; R7 denotes O, phenylene group or a group represented by the following:-(CH2)n- (n is an integer of 1-6); and d denotes 0 or 1] in the presence of an alkylamine and (B) an organic solvent.
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