| 摘要 |
A high voltage shunt regulator circuit includes a high voltage device with a predetermined reverse-conduction threshold connected in series with a thermal compensation device comprising a plurality of gate threshold amplifiers connected in series with one another. The high voltage device includes a plurality of zener diodes connected in series. Each of the gate threshold amplifiers includes a resistive voltage divider and a voltage-controlled resistive device, preferably a MOSFET. The voltage divider is formed by first and second resistors connected in series between first and second terminals of the gate threshold amplifier, with a MOSFET having its drain connected to the first terminal, its source connected to the second terminal, and its gate connected to an intermediate tap of the voltage divider. The zener diodes provide high voltage regulation (up to at least about 1600V), while the thermal compensation device exhibits a negative temperature coefficient that substantially offsets the positive temperature coefficient of the zener diodes. This allows efficient operation at temperatures at least as high as about 200° C. The gate threshold amplifiers, each including a voltage-controlled resistive device, allow operation at low shunt regulation currents, i.e., on the order of about 25 muamps to about 500 muamps.
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