| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce generation of mask distortions due to side wall oxidization of an X-ray absorber pattern, without making a membrane region coincide with an exposure pattern region. SOLUTION: Dummy patterns 4 are arranged on a membrane film 1 except an exposure region 7, and the pattern rule and pattern density of the dummy patterns 4 is practically made equal to the pattern rule and pattern density of an X-ray absorber pattern 3 which is provided on the membrane film 1 in the exposure region 7.</p> |
