| 发明名称 |
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method thereof. SOLUTION: A semiconductor element and a manufacturing method thereof comprise a first electrode made of a silicon material, a stabilizing film which hydrophilizes a surface of the first electrode and readily forms a dielectric film, the dielectric film formed by supplying reactants in order, and a second electrode which is formed on the dielectric film and is larger in work function than the first electrode made of the silicon material. |
| 申请公布号 |
JP2001111000(A) |
申请公布日期 |
2001.04.20 |
| 申请号 |
JP20000242995 |
申请日期 |
2000.08.10 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIN EIKAN;BOKU KOSHU;PARK YOUNG-WOOK;LEE SANG-IN;CHANG YOON-HEE;RI SHOKO;CHOI SUNG-JE;LEE SEUNG-HWAN;LIM JAE-SOON;LEE JOO-WON |
| 分类号 |
H01L29/43;H01L21/02;H01L21/28;H01L21/316;H01L21/318;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/423;H01L29/49;H01L29/51 |
主分类号 |
H01L29/43 |
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