| 摘要 |
PROBLEM TO BE SOLVED: To reduce the difference in height of a laminated film, related to a semiconductor device comprising a large difference in height of the laminated film which is caused by comprising a memory cell and a peripheral circuit part, etc. SOLUTION: A first insulating film is formed on a semiconductor substrate 101 of one conductive type, and a part of it is selectively removed to form a peripheral circuit part element separation insulating film 102 and a memory cell part element separation insulating film 103. Then in a memory cell region comprising the memory cell part element separation insulating film, a floating gate electrode 104, control gate electrode 105, and electrode separation insulating film 106, are formed. The memory cell region and the peripheral circuit element separation insulating film are coated to form a second insulating film 107. A mask pattern is formed in the region except for the memory cell region, and with the mask pattern as a mask, the second insulating film is etched to form a side-wall insulating film on the side wall of the control gate electrode.
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