FERROELECTRIC CAPACITOR AND SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the occurrence of a defect in a ferroelectric film in a semiconductor device having a ferroelectric capacitor. SOLUTION: An anti-oxidizing film, which is formed between a semiconductor element part formed by a reduction action and a ferroelectric capacitor formed in an oxide atmosphere, is formed with a composition allowing the passage of Pb.