| 摘要 |
PROBLEM TO BE SOLVED: To provide a cantilever for scanning-type probe microscopes where PZT cannot deteriorate in a manufacturing process, and thickness can be thinned. SOLUTION: A buffer layer 2 is formed on the upper part of an Si single crystal 1, and a PZT thin film 3 is formed on it. Electrodes 4a-4d are formed on the PZT thin film 3. The PZT thin film 3 uses d33 effect, so that the PZT thin film 3 expands and contracts in the direction of an electric field when the electric field as shown by a figure is applied among the electrodes 4a-4d. The Si single crystal 1 is curved and the position of the probe 6 is displaced by the bimetal operation between the PZT thin film 3 and the Si single crystal 1. On the other hand, when the position of the probe 6 is displaced, the PZT thin film 3 expands and contracts due to the displacement and a voltage is generated among the electrodes 4a-4d. Since no electrodes 4a-4d exist while the PZT thin film 3 is being annealed, Pb in the PZT is diffused into the electrodes to prevent the PZT thin film 3 from deteriorating.
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