CHARGE TRANSFER PATH AND SOLID STATE IMAGE SENSOR USING IT

摘要

PROBLEM TO BE SOLVED: To provide a high integration solid state image sensor having high photoelectric conversion function and high transfer function. SOLUTION: The solid state image sensor comprises multiple photoelectric conversion elements arranged in matrix on the surface of a semiconductor substrate such that the photoelectric conversion elements in the even column are shifted from the odd column by one half pitch in each column while the photoelectric conversion elements in the even row are shifted from the odd row by one half pitch in each row, and a plurality of transfer electrodes having an end part overlapping arrangement defining a plurality of section lines on a transfer channel region extending in the row direction while traversing the transfer channel region and a plurality of channel regions having a stripe plan view formed proximately to a corresponding column of photoelectric conversion elements on the semiconductor substrate and extending in the column direction while snaking. Each transfer channel region includes a region where a plurality of channel transfer sections are juxtaposed.