| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, by which the defective filling of a contact hole caused by the abnormal growth of a CVD-W film can be reduced by suppressing the abnormal growth. SOLUTION: In a semiconductor device manufacturing method, a CVD-W film 6 which fills a contact hole 3 is formed in such a way that a contact layer 5 is formed on an insulating film 2 formed on a semiconductor wafer and having a contact hole 3 and the layer 5, is heat-treated by setting the inside of a treatment chamber to an atmosphere containing no oxygen. Then, after the temperature of the semiconductor wafer is reduced to the temperature corresponding to such energy that can cut the bond between atoms forming the layer 5 or lower, the semiconductor wafer is taken out from the treatment chamber and the CVD-W film 6 is formed.
|
