发明名称 Production of semiconductor device comprises forming dielectric material on component structure and filling chambers between structures, chemical-mechanical polishing and forming fluid insulating material on dielectric
摘要 Production of a semiconductor device comprises forming a dielectric material (112) on a component structure (102) and filling the chambers between the structures; chemical-mechanical polishing the dielectric material and forming a fluid insulating material (118) on the dielectric material to produce a planar surface.
申请公布号 DE19946153(A1) 申请公布日期 2001.04.19
申请号 DE19991046153 申请日期 1999.09.27
申请人 MOSEL VITELIC INC., HSINCHU;PROMOS TECHNOLOGIES, INC.;SIEMENS AG 发明人 TENG, UNION
分类号 H01L21/3105;H01L21/316;(IPC1-7):H01L21/302;H01L21/310 主分类号 H01L21/3105
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