发明名称 |
Production of semiconductor device comprises forming dielectric material on component structure and filling chambers between structures, chemical-mechanical polishing and forming fluid insulating material on dielectric |
摘要 |
Production of a semiconductor device comprises forming a dielectric material (112) on a component structure (102) and filling the chambers between the structures; chemical-mechanical polishing the dielectric material and forming a fluid insulating material (118) on the dielectric material to produce a planar surface.
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申请公布号 |
DE19946153(A1) |
申请公布日期 |
2001.04.19 |
申请号 |
DE19991046153 |
申请日期 |
1999.09.27 |
申请人 |
MOSEL VITELIC INC., HSINCHU;PROMOS TECHNOLOGIES, INC.;SIEMENS AG |
发明人 |
TENG, UNION |
分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/302;H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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