| 摘要 |
<p>A semiconductor memory device comprises a p-type silicon substrate (11) including a first diffused layer (12) and a second diffused layer (13), and a gate insulation film (14) in which carriers are trapped in different areas. A first voltage and a second voltage are applied to the p-type silicon substrate (11) and the gate electrode (2a), respectively, to allow tunnel current to flow between the p-type silicon substrate (11) and the gate electrode (2a) so that the tunnel current may eliminate the carriers trapped in the gate insulation film (14). This allows all the charges trapped in the central portion of the channel area to disappear, resulting in more reliable data erasure.</p> |
