摘要 |
The present invention provides a method for fabricating a capacitor, comprising the steps of forming a trench in a substrate, forming a layer of a first material selected from the group consisting of titanium and titanium nitride in the trench, filling the trench with a conductive material to form a conductive plug, planarizing the substrate, patterning the substrate to partially expose the first material and to create a top portion and a bottom portion to the plug, wherein the bottom portion is in the substrate, and removing the first material from the top portion of the plug.
|