发明名称 Method of making a capacitor
摘要 The present invention provides a method for fabricating a capacitor, comprising the steps of forming a trench in a substrate, forming a layer of a first material selected from the group consisting of titanium and titanium nitride in the trench, filling the trench with a conductive material to form a conductive plug, planarizing the substrate, patterning the substrate to partially expose the first material and to create a top portion and a bottom portion to the plug, wherein the bottom portion is in the substrate, and removing the first material from the top portion of the plug.
申请公布号 US6218255(B1) 申请公布日期 2001.04.17
申请号 US19990277778 申请日期 1999.03.29
申请人 AGERE SYSTEMS GUARDIAN CORP. 发明人 FRITZINGER LARRY BRUCE;LAYADI NACE;MERCHANT SAILESH MANSINH;ROY PRADIP KUMAR
分类号 H01L21/8242;H01L21/02;H01L21/321;H01L21/3213;(IPC1-7):H01L21/20 主分类号 H01L21/8242
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