发明名称 Switching circuit device and semiconductor device
摘要 A switching circuit device including a multi-gate field effect transistor having a plurality of gate electrodes between a drain electrode and a source electrode, a low resistor having its one end connected between the gate electrodes, and a high resistor connected between the other end of the low resistor and any one of the drain electrode, the source electrode and the end of the other low resistor.
申请公布号 US6218890(B1) 申请公布日期 2001.04.17
申请号 US19990350924 申请日期 1999.07.12
申请人 SANYO ELECTRIC CO., LTD. 发明人 YAMAGUCHI TSUTOMU;BANBA SEIICHI;SAWAI TETSURO;UDA HISANORI
分类号 H01L27/06;H03K17/10;H03K17/12;H03K17/687;(IPC1-7):H03K17/687 主分类号 H01L27/06
代理机构 代理人
主权项
地址