发明名称 Integrated circuit having dynamic memory with boosted plateline
摘要 An integrated circuit has a matrix of memory cells with a capacitive element and an access transistor. A plate conductor is connected to terminals of the capacitive element of all the memory cells. A voltage boost circuit boosts a voltage of the plate conductor to a voltage level outside a power supply range of the integrated circuit. A switching element is connected between the plate conductor and a control electrode of the access transistor. Thus the access transistor is controlled with the voltage of the plate conductor. Preferably, the voltage of the plate conductor is boosted below Vss and at a level regulated relative to Vdd.
申请公布号 US6219270(B1) 申请公布日期 2001.04.17
申请号 US19990316558 申请日期 1999.05.24
申请人 U.S. PHILIPS CORPORATION 发明人 VAN GELOVEN JOHANNES A. J.;VAN DER SANDEN CORNELIS G. L. M.
分类号 G11C11/404;G11C11/4074;G11C11/4094;(IPC1-7):G11C11/24 主分类号 G11C11/404
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