NONVOLATILE SEMICONDUCTOR MEMORY AND ITS MANUFACTURING METHOD

摘要

PURPOSE: Provided is a nonvolatile semiconductor memory which enables microminiaturization of a memory cell without causing gate-to-gate short circuit failure and deteriorating isolation performance by restraining dispersion of capacitive coupling of a lamination gate. CONSTITUTION: An element formation region(3) defined by an elements isolation film(2) is formed in a silicon substrate(1). A charge storage layer(5) is formed in the substrate(1) interposing a tunnel insulation film(4), a control gate(8) is formed interposing a gate insulation film(7) thereon, and a memory cell is constituted in this way. The charge storage layer(5) of a memory cell is subjected to pattern formation to overlap partially ranging from an element formation region(3) to the element isolation film(2). A protection insulation film(11) which protects a surface of the element isolation film(2) is arranged between end parts of the charge storage layer(5) of opposite adjacent memory cells on the element isolation film(2).