SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PURPOSE: To provide a semiconductor light-emitting element which is improved in response upon pulse driving with a short pulse width. CONSTITUTION: On a light-emitting layer 7 composed of a nitride semiconductor, a second clad layer 8 made of p-AlGaN and a second contact layer 9a made of p-GaN are formed in this order. The predetermined region of the second clad layer 8 and the second contact layer 9a is removed and a ridge 10 is formed. On upper surfaces of flat parts 82 of the second clad layer 8 that remains without being removed and on both sides of the ridge 10, doped high- resistance current block layers 12 are formed.