MULTILAYER THIN FILM, THIN FILM CAPACITOR, AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: To form a ferroelectric thin film exhibiting excellent crystallinity in the shape of a silicon substrate by employing a platinum based element having face-centered cubic structure as a metallic material of a conductive thin film. CONSTITUTION: A thin TiN film 2 is formed on the cleaned surface of an Si substrate 1 under specified conditions and a thin TiAlN film 3, where a part of Ti site is replaced by Al, is formed thereon. Subsequently, a thin film 4 of a platinum based element, e.g. Ir, having face-centered cubic structure is formed using the TiAlN film 3 as a buffer layer. TiA1N has a lattice length very close to that of Ir and a thin Ir film 4 is grown epitaxially. Thereafter, a thin PZT film is formed on the thin Ir film 4 grown epitaxially to obtain an epitaxially grown thin PZT film 5. Finally, a thin Pt film 6 is deposited thereon as the upper electrode of a thin film capacitor 10 thus obtaining a thin film capacitor 10 of MIM structure.