发明名称 METHOD FOR SELECTIVELY FORMING COPPER FILM
摘要 PURPOSE: A method for selectively forming copper film is provided to deposit copper selectively on the copper-film-formation requiring regions of an underlying film and to reduce the cost of the raw material of copper. CONSTITUTION: A method for selectively forming copper film consists of the first step of forming on the surface of the underlying film(22) provided on a substrate(21) the thin-film made of a silane coupling agent or an interfacial active agent, and the second step of projecting UV rays on the copper-film formation prearranging regions of the thin film to perform on these regions the CVDs of copper.
申请公布号 KR20010029908(A) 申请公布日期 2001.04.16
申请号 KR20000039061 申请日期 2000.07.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OMIYA KAYOKO;SUZUKI KEIJI;YAMADA KEISAKU
分类号 G02F1/136;H01L21/285;H01L21/768;(IPC1-7):G02F1/136 主分类号 G02F1/136
代理机构 代理人
主权项
地址