发明名称 |
METHOD FOR SELECTIVELY FORMING COPPER FILM |
摘要 |
PURPOSE: A method for selectively forming copper film is provided to deposit copper selectively on the copper-film-formation requiring regions of an underlying film and to reduce the cost of the raw material of copper. CONSTITUTION: A method for selectively forming copper film consists of the first step of forming on the surface of the underlying film(22) provided on a substrate(21) the thin-film made of a silane coupling agent or an interfacial active agent, and the second step of projecting UV rays on the copper-film formation prearranging regions of the thin film to perform on these regions the CVDs of copper.
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申请公布号 |
KR20010029908(A) |
申请公布日期 |
2001.04.16 |
申请号 |
KR20000039061 |
申请日期 |
2000.07.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OMIYA KAYOKO;SUZUKI KEIJI;YAMADA KEISAKU |
分类号 |
G02F1/136;H01L21/285;H01L21/768;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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