| 摘要 |
PURPOSE: To provide a polishing method, a polishing device, and a manufacturing method for a semiconductor device, where occurrence of dishing or erosion is suppressed in a planarizing process for polishing a metal film to constitute wiring of a semiconductor device having a multilayer interconnection structure. CONSTITUTION: A process (PR4) for forming a passive state film on the surface of a metal film which prevents electrolytic reaction of the metal, process (PR5) where a protruding passive state film present on the surface of metal film which is generated by filling a wiring channel is selectively removed by mechanical polishing so that the protruding metal film is exposed on the surface, a process (PR6) where the exposed protruding part of the metal film is removed by electrolytic polishing, so that the rough surface of the metal film generated by filling of filling of the wiring channel is planarized, and a process (PR7) where a metal film present on the insulating film of the metal film whose surface is planarized is removed by electrolytic composite polishing, where electrolytic polishing and mechanical polishing are composed to form wiring are provided.
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