| 摘要 |
PURPOSE: To control reflectance even when the wavelength of light for exposure is shortened. CONSTITUTION: The photomask comprises a transparent substrate 1, an antireflection structure formed by successively laminating a chromium oxide film 3, a chromium film 4 and a chromium oxide film 5 on the principal face side of the substrate 1, an LiF film 2 as an antireflection film formed on the interface between the chromium oxide film 3 and the substrate 1 and a spin-on glass film 6 formed on the surface of the chromium oxide film 5. |
