| 摘要 |
PURPOSE: To provide a ferroelectric capacitor in which an erroneous reading (operation) caused by an imprint characteristic is prevented, which has a long lifetime, and which can perform a storage operation having high reliability. CONSTITUTION: In the ferroelectric memory consisting of a selection transistor and the ferroelectric capacitor, the ferroelectric capacitor comprises a dummy capacitor and a memory capacitor constituted so that a first electrode (storage node electrode) is connected to a source or a drain of the selection transistor and a same hysteresis curve is plotted, second electrodes of the dummy capacitor and the memory capacitor are connected to first and second plate lines respectively, and potentials of the first and the second plate lines are set so that the dummy capacitor and the memory capacitor are polarized in the reverse direction to each other.
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