| 摘要 |
PURPOSE: A silicon die structure having reliability is provided to prevent breakdown due to a peak current along the P/N junction end portion and the surface insulating film of a silicon power device. CONSTITUTION: An upper part of a silicon substrate(1101) is made an upper layer(1102) doped into an N-type. On the upper part of the layer(1102), a P-well(1103) is formed by P-type dope injection, and an SiC layer(1105) is formed by carbon fold out. The SiC layer has a critical electric field which is higher than that of the N-type upper layer(1102), and is made into an edge band, on which an oxide layer(1106) is formed. A metal layer(1107) is formed on the P-well(1103). The SiC layer(1105) stretches as far as to a part under the P well(1103) and prevents a P-well(1103) end potion from being bonded directly to the upper layer part(1102). Concentration of a leakage current(1110) in the P-well end portion is relaxed, and the current moves to a P/N junction parallel surface part(1109). Thereby surface insulating film breakdown is improved effectively.
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