POSITIVE TYPE PHOTORESIST COMPOSITION

摘要

PURPOSE: Disclosed is a positive type photoresist composition having high sensitivity and high resolving power of <= 0.2 μm in the production of a semiconductor device, having a rectangular shape and less liable to cause a dimensional shift in pattern transfer to a lower layer in an oxygen plasma etching step when the composition is used as the upper layer resist of a two-layer resist system. CONSTITUTION: The positive type photoresist composition contains a polysiloxane containing at least a siloxane structural unit of formula I (where L is a single bond or arylene, A is an aromatic ring or an alicyclic structure which may have a substituent and (n) is an integer of 1-6) and a siloxane structural unit having a group which is decomposed by an acid and generates an alkali-soluble group.