THIN FILM TRANSISTOR AND FABRICATION THEREOF

摘要

PURPOSE: A fabrication method of a TFT structure is provided to sufficiently realize low resistance interconnection while preventing deterioration of characteristics due to undercut of a barrier metal layer when copper is used as a source-drain electrode material. CONSTITUTION: The structure of a TFT includes a gate electrode(3) and a gate insulation film(4) formed on a glass substrate(2), a semiconductor active layer(5) formed oppositely to the gate electrode(3) on the gate insulation film(4), ohmic contact layers(6) formed on the opposite end parts of the semiconductor active layer(5), and a source electrode(7) and a drain electrode(8) connected electrically with the semiconductor active layer(5) through respective ohmic contact layers(6). The source electrode(7) and the drain electrode(8) are formed of copper and a barrier metal layer(9) is provided only in a region on the lower surface of the source electrode(7) and the drain electrode(8) located above the upper surface of the ohmic contact layers(6).