发明名称 Menetelmä oksidiohutkalvojen kasvattamiseksi
摘要 A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
申请公布号 FI19992223(A) 申请公布日期 2001.04.15
申请号 FI19990002223 申请日期 1999.10.14
申请人 ASM MICROCHEMISTRY LTD, 发明人 RITALA,MIKKO KALERVO;RAHTU,ANTTI;LESKELAE,MARKKU ANTERO;KUKLI,KAUPO
分类号 H01L21/20;C23C16/02;C23C16/18;C23C16/40;C23C16/44;C23C16/455;C30B25/02;C30B25/18;H01L21/316 主分类号 H01L21/20
代理机构 代理人
主权项
地址