CRYSTAL GROWING METHOD FOR SINGLE-CRYSTAL GaN, AND SINGLE-CRYSTAL GaN SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing GaN single-crystal with low dislocation which is 106 cm-2 or less. SOLUTION: In the crystal growing method of single-crystal gallium nitride, the growth surface of gaseous phase growth is provided with not a plane state but a three-dimensional facet structure, and crystal growth is realized while the facet structure is not embedded but maintained as it is so that dislocation can be reduced.