| 摘要 |
PROBLEM TO BE SOLVED: To raise a capacity value (capacitance density) of the capacitive element of MIM structure which is provided per a unit area, when it is formed on a semiconductor substrate, and to reduce the size of a semiconductor integrated circuit device comprising the capacitive element of MIM structure. SOLUTION: On a semiconductor substrate, a first metal film, first insulating film, second metal film, second insulating film, and third metal film are laminated sequentially, with the first and third metal films electrically connected together. A first capacitor comprising the first metal film, first insulating film, and second metal film, and a second capacitor comprising the second metal film, second insulating film, and third metal film are connected in parallel. A capacitor intrinsic part which functions as a capacitance of the second capacitor is provided inside the capacitor intrinsic part which functions as capacitance of the first capacitor.
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