| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of wiring formed of a conductive film superior in embedding characteristics, while ensuring a high reliability. SOLUTION: A wiring channel 15 is formed at an interlayer insulating film 11b, and a titanium nitride film 16 is formed on the interlayer insulating film 11b comprising the wiring channel 15. Then a copper film 17 is formed by coating. A copper film is deposited on the copper film 17 by sputtering to fill a recessed part (wiring channel 15), and an excessive copper film and titanium nitride film other than the wiring channel 15 are removed by a CMP method to form a wiring.
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