GAINP SYSTEM LAMINATED STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a laminated structure for GaInP system high electron mobility field effect transistor, which has uniform mutual conductance and pinch-off voltage, by improving the surface states of a channel layer and an electron supply layer and making the indium composition to be uniform. SOLUTION: A GaAs layer where triethylgallium is made to be a raw material is arranged directly below a GaInAs channel layer.