发明名称 METHOD FOR FORMING COPPER DUAL DAMASCENE STRUCTURE BODY ON SEMICONDUCTOR BASE LAYER SURFACE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a copper dual damascene structure body with less diffusion to an adjoining part which takes place during a manufacturing process, surface oxidation, dishing, and erosion. SOLUTION: An inter-metal insulating film (IMD) layer 16 is deposited on the surface of a base layer 10, over which a cap layer 18 is deposited, A dual damascene structure body expected part (a trench part where a copper 26 is eventually packed to provide a dual damascene structure body) is patterned in the layer 16 through the cap layer 18, and a copper seed layer is deposited over a barrier layer 20 across the entire surface comprising an inner wall. Then the dual damascene structure body expected part is filled with a resist and the barrier layer 20 as well as the copper seed layer except for the upper part of trench are removed and flattened as far as the cap layer 18. The resist is removed from the dual damascene structure body expected part, and the copper 26 is packed by an electroless plating method, with an excessive copper removed by a touch-up CMP method. Lastly, a liner or oxidation/diffusion protective layer 30 is deposited on the dual damascene structure body as well as its surrounding region.
申请公布号 JP2001102452(A) 申请公布日期 2001.04.13
申请号 JP20000245826 申请日期 2000.08.14
申请人 CHARTERED SEMICONDUCTOR MFG LTD 发明人 HO PAUL KWOK KEUNG;ZHOU MEI SHENG;GUPTA SUBHASH
分类号 H01L21/3205;H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/3205
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