| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory structure wherein multi-value information is written in and read out. SOLUTION: On the surface of a semiconductor substrate between source and drain regions formed on the semiconductor substrate, at least a ferroelectrics transistor where a gate electrode is laminated through a first ferroelectrics layer, first and second electrodes, and a ferroelectrics capacitor where, comprising a second ferroelectrics layer held between the first and second electrodes, the first electrode is connected to one of the source/drain regions of the transistor, are provided. A first electric potential difference is generated between a control electrode and the semiconductor substrate so that the polarity of the first ferroelectrics layer is inverted, while a second electric potential difference is generated between the first and second electrodes so that the polarity of the second ferroelectrics layer is inverted, to allow write and read of multi-value data.
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