CHEMICAL MACHINE POLISHING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SLURRY FOR POLISHING

摘要

PROBLEM TO BE SOLVED: To provide a chemical machine-polishing method that can suppress the number of scratches to 0.3/cm2 or less. SOLUTION: Slurry, in which agglomerate with a diameter of 1μm or layer where an abrasive grain contained in the slurry is agglomerated is set to 10,000/cm3 or less at the point of polishing is used for carrying out chemical machine polishing, thus greatly reducing a scratch generated on a polishing surface. To suppress the number of the agglomerates, a surface-active agent is added.