| 摘要 |
<p>An indium layer (13) and a copper layer (15), and whenever necessary, a gallium layer or a gallium-alloy layer, are laminated on an electrode film (12) formed on one of the surfaces of a substrate (10) to form a laminated metallic film. The metallic film is then subjected to sulfurisation treatment or selenization treatment to form a p-type semiconductor layer (14) made of "CuInS2 or CuInSe2" or "Cu(In,Ga)S2 or Cu(In,Ga)Se2". This p-type semiconductor layer (14) is subjected to KCN treatment, for removing impurities such as copper sulfide, copper selenide, etc., by a KCN solution, and an n-type semiconductor layer (16) is formed on this p-type semiconductor layer (14) to form a solar cell. Preferably the indium layer (13) is formed under heating, or is heat-treated by heat-treatment while the surface of the indium layer (13) is exposed. A thin film layer of a precious metal (22) may be formed between the electrode film (12) and the p-type semiconductor layer (14) during the production of the solar cell. <IMAGE></p> |
