| 摘要 |
The present invention discloses a method of optical correction for improving the pattern shrinkage caused by scattering of the light during photolithography processes, wherein the patterns on photomasks are corrected by providing aid patterns. Therefore, serifs or hammerheads are not necessary, and the costs can be decreased. According to the present invention, a chrome aid block is provided between the edges of the patterns. It is noted that the size of the chrome aid block is between ⅓ to ½ the wavelength of light used during exposure. Therefore, the pattern shrinkage caused by scattering of the light during exposure can be reduced, and there is no additional block formed on the photoresist layer. In addition, the standing wave effect can be prevented; thus, the pattern transfer is more accurate.
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