发明名称 Semiconductor device and process for manufacturing the same
摘要 A memory module MM, in which a module wiring substrate 5 is equipped with function switching means KK1 and KK2 for arbitrarily switching function switching signals to be inputted to function switching pins FP0 and FP1 of memories 1. By these function switching means KK1 and KK2, moreover, the function switching signals are arbitrarily switched from any of no connection, a supply voltage Vcc and a ground potential Vss. These signals are inputted altogether to all the mounted memories 1 to switch and arbitrarily set functions including reading modes and refresh cycles.
申请公布号 US6215687(B1) 申请公布日期 2001.04.10
申请号 US20000512476 申请日期 2000.02.24
申请人 HITACHI, LTD.;HITACHI TOHBU SEMICONDUCTOR, LTD. 发明人 SUGANO TOSHIO;TSUKUI SEIICHIRO;TSUNEDA KENSUKE
分类号 H05K1/02;G11C5/04;G11C8/10;G11C8/14;H01L25/10;H01L25/18;H05K1/00;H05K1/18;H05K3/22;(IPC1-7):G11C5/02 主分类号 H05K1/02
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