发明名称 APPARATUS AND METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL SUBSTRATE
摘要 <p>PURPOSE: An apparatus and a method for manufacturing a nitride single crystal substrate are provided to effectively prevent cracks which are produced on the single crystal substrate during the process of forming a nitride single crystal substrate by separating a nitride film formed on a base substrate from the base substrate. CONSTITUTION: The apparatus for manufacturing a substrate comprises a reaction chamber (11A) where a thick film growing process is performed on a base substrate (30); a heating chamber connected to the reaction chamber (11A), wherein a laser irradiating process for manufacturing the substrate is carried out by separating the thick film from the base substrate (30); and a specimen holder (40) maintaining a certain temperature mounted in the heating chamber (11C). The method for manufacturing a substrate comprises the steps of preparing a base substrate; forming a thick film on the base substrate in a reaction chamber; and manufacturing the substrate by irradiating laser on the base substrate as maintaining the base substrate to a certain temperature higher than an ordinary temperature so that the thick film is separated from the base substrate.</p>
申请公布号 KR20010029199(A) 申请公布日期 2001.04.06
申请号 KR19990041892 申请日期 1999.09.30
申请人 LPE PRODUCTS CO., LTD. 发明人 KIM, BONG CHEOL
分类号 C30B29/38;C30B23/02;C30B25/02;C30B25/08;H01L21/20;H01L21/205;(IPC1-7):C30B23/02 主分类号 C30B29/38
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