SEMICONDUCTOR DEVICE HAVING METAL INTERCONNECTION PASSIVATION LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device having a metal interconnection passivation layer is provided to prevent a metal interconnection from being damaged by moisture absorption during a process or test, by sealing the metal interconnection in contact with a substrate with a moisture-proof oxide layer through a tungsten plug. CONSTITUTION: The first interlayer dielectric(42) and the first moisture-proof first oxide layer are sequentially formed on a substrate(40). A contact hole(48) is formed on the first oxide layer and the first interlayer dielectric. The first conductive plug(50a) is filled in the contact hole. A stacked structure composed of an adhesion layer, the first metal interconnection(54a) and an anti-reflecting coating layer is formed on the first conductive plug and the first oxide layer around the first conductive plug. The moisture-proof second oxide layer in contact with the first oxide layer is formed on the entire surface of the stacked structure.