发明名称 CAPACITOR ARRAY OF SEMICONDUCTOR DEVICE IN WHICH CROSS TALK BETWEEN ADJACENT CAPACITORS IS CONTROLLED AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A capacitor array of a semiconductor device is provided to control a cross talk phenomenon between adjacent capacitors, by forming a porous insulating layer or air cap among a plurality of capacitors. CONSTITUTION: A capacitor array of a semiconductor device has a plurality of capacitors. A plurality of storage electrodes(110) are isolated from each other by an insulating layer having low dielectric pores to isolate adjacent capacitors from each other, formed on a semiconductor substrate. A dielectric layer(120) is formed on the storage electrodes. A plate electrode(130) is formed on the dielectric layer.
申请公布号 KR20010028837(A) 申请公布日期 2001.04.06
申请号 KR19990041312 申请日期 1999.09.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, HO GYU;LEE, HAE JEONG
分类号 H01L27/108;H01L21/02;H01L21/764;H01L27/08;(IPC1-7):H01L27/108 主分类号 H01L27/108
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