| 摘要 |
PROBLEM TO BE SOLVED: To improve the sensor performance without increasing the size and the cost of a thermoelectric sensor device. SOLUTION: The thermoelectric sensor device constituted of polycrystalline silicon, titanium or AlSiCu is shown as a thermocouple composed of material for a thermoelectric sensor device. In this manufacturing method, material such as aluminum, titanium, an aluminum alloy and a titanium alloy which have low thermal conductivity is selected as a thermocouple element line, and zigzag structure is used in the element line, thereby increasing the length of the element line. In order to reduce the external dimension of a thermoelectric sensor module and increase the whole of a silicon wafer, etching for forming a gap in a silicon substrate below the device is performed by applying etching technique to a front side Si bulk. At the same time, a resistor which is treated as a heater is formed on a film, in order to adjust the device.
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