| 摘要 |
PROBLEM TO BE SOLVED: To adjust the threshold voltage of a read transistor, without adding special processes in a DRAM gain cell for logic mixed mounting. SOLUTION: A semiconductor device is provided with a storage node SN for retaining data as a potential change, and a read transistor TR, where a gate is connected to the storage node SN, either a source or a drain is connected to a bit line BL, and the transistor TR is turned on or off according to the potential of the storage node SN, and stored data is read out to the bit line BL. The gate electrode of the read transistor TR is made of a semiconductor material having an opposite conductivity to that of a channel, namely p+ polysilicon, when the read transistor TR is, for example, an nMOSFET. |
