| 摘要 |
PROBLEM TO BE SOLVED: To enable constituting a gate region getting into underside of a source region, without subjecting the region high-energy ion implantation. SOLUTION: C(carbon) is ion-implanted to a predetermined depth, deeper than an n-type source region 3 at a reserved portion to form a p-type gate region 4 in a surface layer of an n-type drift region 2. Further, a second inductive impurity is ion-implanted to a deep region 4B, deeper than the region 4A and to the depth where C, is ion-implanted in the surface layer of the n-type drift region 2. Thereafter, a p-type impurity is activated by heat-treatment. As a result, lateral dispersion of the p-type impurity is suppressed to the limit of the depth where C is ion-implanted, and lateral dispersion is enlarged in the region deeper than the depth where C is ion-implanted, resulting in constitution of p-type gate region, in such a manner as to creep into under the source region.
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