| 摘要 |
PURPOSE: A method for fabricating a capacitor using a tantalum oxide layer as a dielectric layer is provided to improve a capacitance characteristic by increasing an anti-oxidizing property of a lower electrode of the capacitor. CONSTITUTION: In the method, the lower electrode(209) of the capacitor is formed by a barrier metal layer(205), a polysilicon layer(206) and a sidewall spacer(208). Then, a tungsten silicide layer(211) is selectively formed only on a surface of the lower electrode(209). Next, the dielectric layer(212) is formed by the tantalum oxide layer on the tungsten silicide layer(211). Thereafter, a densification process is performed to enhance a density of the tantalum oxide dielectric layer(212). Particularly, the tungsten silicide layer(211) prevents the lower electrode(209) from being oxidized during the densification process. After that, an upper electrode(213) of the capacitor is formed by a doped polysilicon layer or a metallic layer on the dielectric layer(212).
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