METHOD FOR MANUFACTURING ELECTRICAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an electrical interconnection of a semiconductor device is provided to decrease permittivity of an interlayer dielectric, by preventing a separate silicon nitride layer functioning as a capping layer in forming the electrical interconnection by a damascene process using a chemical mechanical polishing(CMP) process. CONSTITUTION: An interlayer dielectric(500) is formed on a semiconductor substrate(100). A contact hole(550) is formed in the interlayer dielectric. A conductive plug(701) for filling the contact hole is formed. The interlayer dielectric adjacent to the conductive plug is etched to form a lengthily-extended groove(570) which exposes a sidewall of the conductive plug. The groove is filled to form a conductive line electrically connected to the conductive plug.