| 摘要 |
PURPOSE: An ion implanter is provided to allow a real-time measurement of the temperature of a wafer and thereby to improve a process speed. CONSTITUTION: The ion implanter includes a reaction chamber(100) and a lifter(200) such as a Y-scan assembly. The wafer(WF) is placed in the reaction chamber(100) and goes up and down by the lifter(200). One side of the lifter(200) has a sensing pattern(210) formed thereon. The ion implanter further includes a detector(300) such as a photo sensor, which detects the sensing pattern(210) and generates a control pulse. The detector(300) is connected to a controller(400) such as a micro processor, which receives the control pulse and generates a temperature measuring signal. In addition, a temperature measuring sensor(500) is disposed in the reaction chamber(100) and operates according to the temperature measuring signal from the controller(400). An infrared sensor capable of sensing heat generated from the wafer is preferably used as the temperature measuring sensor(500). The controller(400) is connected to a display unit(410) and a driving controller(420) for the lifter(200).
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