SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method by which voids can be formed under a T-shaped gate electrode even when a high-quality insulating film forming method is used and a semiconductor device provided with the T-type gate electrode. SOLUTION: A semiconductor device is provided with source and drain areas 110 and 111 formed in a semiconductor substrate, a channel area formed between the areas 110 and 111, and gate electrodes 102 and 103 which are formed on the channel area and having eaves sections 106 in the directions in which the distances from the channel area become longer. The device is also provided with projecting sections 104 formed between the eaves sections 106 and substrate and an insulating film 105 which is formed to leave voids 107 between the eaves sections 106 and substrate.